H4422S

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200907 Issued Date : 2009.03.09 Revised Date : Page No. : 1/5 H4422S N-Channel Enhancement-Mode MOSFET (30V, 11A) 8-Lead Plastic SO-8 Package Code: S H4422S Symbol & Pin Assignment Features RDS(on)=13.5mΩ@VGS=10V, ID=11A RDS(on)=24mΩ@VGS=4.5V, ID=5A Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 o Parameter Ratings 30 ±20 11 50 2.5 -55 to +150 50 Units V V A A W °C °C/W Total Power Dissipation @TA=25 C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)*2 *1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board H4422S HSMC Product Specification Free Datasheet http://www.datasheet4u.com/ HI-SINCERITY MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Static BVDSS RDS(on) VGS(th) IDSS IGSS gFS Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Transconductance VGS=0V, ID=250uA VGS=10V, ID=11A VGS=4.5V, ID=5.0A VDS=VGS, ID=250uA VDS=30V, VGS=0V VGS=±20V, VDS=0V VDS=10V, ID=10A 1 30 Characteristic Test ...