P-Channel MOSFET
Freescale P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process t...
Description
Freescale P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
AO4403/ MC4403
PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 60 @ VGS = -4.5V -20 80 @ VGS = -2.5V 150 @ VGS = -1.8V
ID (A) -8.3 -6.7 -4.5
Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology
1 2 3 4
8 7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current
b a a
o
TA=25 C TA=70 C
o
o
ID IDM IS
-8.3 -6.7 ±50 -2.1 3.1 2.0 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
o
o
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambienta t <= 10 sec Steady-State
Symbol
RθJA
Maximum 40
70
Units
o o
C/W C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
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AO4403/ MC440...
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