Freescale Semiconductor ‘ Technical Data
Document Number: MRFE6S8046N Rev. 0, 5/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications. Typical GSM Performance: VDD = 28 Vo...
