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MRFE6S8046NR1 Dataheets PDF



Part Number MRFE6S8046NR1
Manufacturers Freescale
Logo Freescale
Description RF Power Field Effect Transistors
Datasheet MRFE6S8046NR1 DatasheetMRFE6S8046NR1 Datasheet (PDF)

Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications. • Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW Frequency 864 MHz 880 MHz 894 MHz Gps (dB) 19.9 20 19.8 hD (%) 58.7 58.5 57.7 MRFE6S8046NR1 MRFE6S8.

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Freescale Semiconductor ‘ Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications. • Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW Frequency 864 MHz 880 MHz 894 MHz Gps (dB) 19.9 20 19.8 hD (%) 58.7 58.5 57.7 MRFE6S8046NR1 MRFE6S8046GNR1 864 - 894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs • Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 70 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness • Typical Pout @ 1 dB Compression Point ] 47 Watts CW • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA, Pout = 17.8 Watts Avg. Spectral Regrowth @ 400 kHz (dBc) 61.2 63.4 63.7 Spectral Regrowth @ 600 kHz (dBc) 70.9 72.5 73 CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRFE6S8046NR1 Frequency 864 MHz 880 MHz 894 MHz Gps (dB) 19.8 19.9 19.8 hD (%) 43.8 43.6 43.1 EVM (% rms) 2.1 2 2 CASE 1487 - 05, STYLE 1 TO - 270 WB - 4 GULL PLASTIC MRFE6S8046GNR1 PARTS ARE SINGLE - ENDED Features • Class F Output Matched for Higher Impedances and Greater Efficiency • Designed for High Efficiency. Typical Drain Efficiency @ P1dB ] 66% • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) RFin/VGS 3 2 RFout/VDS RFin/VGS 4 1 RFout/VDS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +66 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc °C °C °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2009. All rights reserved. MRFE6S8046NR1 MRFE6S8046GNR1 1 Free Datasheet http://www.datasheet4u.com/ RF Device Data Freescale Semiconductor Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 35.5 W CW, 28 Vdc, IDQ = 300 mA Case Temperature 82°C, 18 W CW, 28 Vdc, IDQ = 285 mA Symbol RθJC Value (1,2) 1.7 1.9 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model .


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