SI1539CDL

Si1539CDL Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 RDS(on) () 0.388 at VGS = 10 V 0.525 at VGS = 4.5 V 0.890 at VGS = - 10 V 1.7 at VGS = - 4.5 V ID (A)a 0.7 0.6 - 0.5 - 0.3 Qg (Typ.) 0.55 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested P-Channel - 30 0.8 APPLICATIONS DC/DC Converter Load Switch D1 S2 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code G1 2 5 G2 RG XX YY G2 Lot Traceability and Date Code G1 D2 3 4 S2 Part # Code S1 N-Channel MOSFET D2 P-Channel MOSFET Top View Ordering Information: Si1539CDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Source-Drain Current Diode Current Pulsed Drain Current TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 °C TA = 25 °C IS IDM ID Symbol VDS VGS 0.7 0.6 0.7 b, c N-Channel 30 ± 20 P-Channel - 30 - 0.5 - 0.4 - 0.4b, c - 0.4b, c - 0.3 - 0.2b, c -1 0.34 0.22 0.29b, c 0.18b, c - 55 to 150 Unit V 0.5b, c 0.3 0.2b, c 2 0.34 0.22 0.29 b, c A W 0.18b, c °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Junction-to-Ambientb, d t  10 s Steady State Symbol RthJA RthJF Typ. 365 308 Max. 438 370 P-Channel Typ. 365 308 Max. 438 ...