Complementary 30-V (D-S) MOSFET
Si1539DL
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 30
rDS(on) (W)
0.480 @ VG...
Description
Si1539DL
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 30
rDS(on) (W)
0.480 @ VGS = 10 V 0.700 @ VGS = 4.5 V 0.940 @ VGS = -10 V
ID (A)
0.63 0.52 -0.45 -0.33
P-Channel
-30
1.700 @ VGS = -4.5 V
SOT-363 SC-70 (6-LEADS)
S1 1 6 D1 Marking Code RC G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code
D2
3
4
S2
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS 0.25 0.30 0.16 0.23 0.27 0.14 -55 to 150
P-Channel 5 secs Steady State
-30 "20 V - 0.45 -0.32 1.0 -0.25 0.30 0.16 -0.23 0.27 0.14 W _C -0.42 -0.31 A
Symbol
VDS VGS
5 secs
Steady State
30
Unit
0.63 0.45
0.54 0.43
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71250 S-21374—Rev. B, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
360 400 300
Maximum
415 460 350
Unit
_C/W
2-1
Free Datasheet http://www.datasheet4u.com/
Si1539DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VD...
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