SI1553DL

Si1553DL Vishay Siliconix Complementary 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.385 @ VGS = 4.5 V 0.630 @ VGS = 2.5 V 0.995 @ VGS = -4.5 V ID (A) "0.70 "0.54 "0.44 "0.32 P-Channel -20 1.800 @ VGS = -2.5 V SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code RA G1 2 5 G2 XX YY Lot Traceability and Date Code Part # Code D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS 0.25 0.30 0.16 0.23 0.27 0.14 -55 to 150 P-Channel 5 secs Steady State -20 "12 V "0.44 "0.31 "1.0 -0.25 0.30 0.16 -0.23 0.27 0.14 W _C "0.41 "0.30 A Symbol VDS VGS 5 secs Steady State 20 Unit "0.70 "0.50 "0.66 "0.48 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71078 S-21374—Rev. D, 12-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 360 400 300 Maximum 415 460 350 Unit _C/W 2-1 Free Datasheet http://www.datasheet4u.com/ Si1553DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -...