MMDT8150

UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE(SAT) performance and the transistor elements are independent to eliminate interference. „ FEATURES * Low VCE(SAT), VCE(SAT)=40mV (typ.)@IC / IB = 50mA / 2.5mA * Transistor elements are independent to eliminate interference. * Mounting cost and area can be cut in half. „ EQUIVALENT CIRCUIT 6 5 4 Tr1 1 2 3 Tr2 „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMDT8150L-AL6-R MMDT8150G-AL6-R MMDT8150L-AL6-R Package SOT-363 Packing Tape Reel (1)Packing Type (2)Package Type (3)Lead Free (1) R: Tape Reel (2) AL6: SOT-363 (3) Halogen Free, L: Lead Free „ MARKING T81 G: Halogen Free L: Lead Free www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 2 QW-R218-017.a Free Datasheet http://www.datasheet4u.com/ MMDT8150 „ Preliminary NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 800 mA Collector Current (Pulse) ICP 1.5 (Note 2) A Power Dissipation PD 200 (total) (Note 3) mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device coul...