(MUR2505 - MUR2520R) Silicon Super Fast Recovery Diode
MUR2505 thru MUR2520R
Silicon Super Fast Recovery Diode
Features
• High Surge Capability • Types up to 600 V VRRM DO-4 P...
Description
MUR2505 thru MUR2520R
Silicon Super Fast Recovery Diode
Features
High Surge Capability Types up to 600 V VRRM DO-4 Package
VRRM = 50 V - 600 V IF = 25 A
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter Repetitive p p peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 145 °C TC = 25 °C, tp = 8.3 ms Conditions MUR2505 (R) 50 35 50 25 500 -65 to 175 -65 to 175 MUR2510 (R) 100 70 100 25 500 -65 to 175 -65 to 175 MUR2520 (R) 200 140 200 25 500 -65 to 175 -65 to 175 Unit V V V A A °C °C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Diode forward voltage Reverse current Symbol VF IR Conditions IF = 25 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 125 °C IF=0.5 A, IR=1.0 A, IRR= 0.25 A MUR2505 (R) 1 10 3 MUR2510 (R) 1 10 3 MUR2520 (R) 1 10 3 Unit V μA mA
Recovery Time
Maximum reverse recovery time TRR 75 75 75 nS
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MUR2505 thru MUR2520R
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