TECHNICAL DATA
PNP HIGH VOLTAGE SILICON TRANSISTOR
Qualified per MIL-PRF-19500/397 Devices 2N3743 2N4930 2N4931 Qualifie...
TECHNICAL DATA
PNP HIGH VOLTAGE SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/397 Devices 2N3743 2N4930 2N4931 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Sym
VCEO VCBO VEBO IC PT TJ, Tstg
2N3743 2N4930 2N4931 Unit
300 300 200 250 200 250 5.0 200 1.0 5.0 -65 to +200 Vdc Vdc Vdc mAdc W W 0 C Unit C/W
@TA = +250C 1 @TC = +250C 2 Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C Max. 35
0
TO-39* (TO-205AD)
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 1.0 mAdc 2N3743 2N4930 2N4931 2N3743 2N4930 2N4931 V(BR)CEO 300 200 250 300 200 250 5.0 250 250 250 Vdc
Collector-Emitter Breakdown Voltage IC = 100 µAdc
V(BR)CBO
Vdc
Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Base Cutoff Current VCB = 250 Vdc VCB = 150 Vdc VCB = 200 Vdc
V(BR)EBO 2N3743 2N4930 2N4931
Vdc
ICBO
ηAdc
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120101 Page 1 of 2
2N3743, 2N4930, 2N4931, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Emitter-Base Cutoff Current VEB = 4.0 Vdc Symbol IEB...