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2N4930 Dataheets PDF



Part Number 2N4930
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description PNP HIGH VOLTAGE SILICON TRANSISTOR
Datasheet 2N4930 Datasheet2N4930 Datasheet (PDF)

TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices 2N3743 2N4930 2N4931 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Sym VCEO VCBO VEBO IC PT TJ, Tstg 2N3743 2N4930 2N4931 Unit 300 300 200 250 200 250 5.0 200 1.0 5.0 -65 to +200 Vdc Vdc Vdc mAdc W W 0 C Unit C/W @TA = +250C 1 @TC = +250C 2 Operating & Storage Junction Temperature.

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TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices 2N3743 2N4930 2N4931 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Sym VCEO VCBO VEBO IC PT TJ, Tstg 2N3743 2N4930 2N4931 Unit 300 300 200 250 200 250 5.0 200 1.0 5.0 -65 to +200 Vdc Vdc Vdc mAdc W W 0 C Unit C/W @TA = +250C 1 @TC = +250C 2 Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C Max. 35 0 TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 1.0 mAdc 2N3743 2N4930 2N4931 2N3743 2N4930 2N4931 V(BR)CEO 300 200 250 300 200 250 5.0 250 250 250 Vdc Collector-Emitter Breakdown Voltage IC = 100 µAdc V(BR)CBO Vdc Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Base Cutoff Current VCB = 250 Vdc VCB = 150 Vdc VCB = 200 Vdc V(BR)EBO 2N3743 2N4930 2N4931 Vdc ICBO ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3743, 2N4930, 2N4931, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 4.0 Vdc Symbol IEBO Min. Max. 150 Unit ηAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 30 mAdc, VCE = 10 Vdc IC = 50 mAdc, VCE = 20 Vdc Collector-Emitter Saturation Voltage IC = 30 mAdc, IB = 3.0 mAdc IC = 10 mAdc, IB = 1.0 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 30 mAdc, IB = 3.0 mAdc hFE 30 40 40 50 30 200 VCE(sat) 1.2 1.0 1.0 1.2 Vdc VBE(sat) Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 20 Vdc, IE = 0, f ≥ 0.1 MHz Input Capacitance VEB = 1.0 Vdc, IC = 0, f ≥ 0.1 MHz hfe hfe Cobo Cibo 2.0 30 8.0 300 15 400 pF pF SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t ≥ 1.0 s Test 1 VCE = 20 Vdc, IC = 50 mAdc All Types Test 2 VCE = 100 Vdc, IC = 10 mAdc All Types Test 3 VCE = 300 Vdc, IC = 3.3 mAdc 2N3743 VCE = 200 Vdc, IC = 5.0 mAdc 2N4930 VCE = 250 Vdc, IC = 4.0 mAdc 2N4931 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. .


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