2N4920

2N4918 - 2N4920 Series Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation, PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 A Complement to NPN 2N4921, 2N4922, 2N4923 Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO Vdc 2N4918 40 2N4919 60 2N4920 80 Collector − Base Voltage VCBO Vdc 2N4918 40 2N4919 60 2N4920 80 Emitter − Base Voltage Collector Current − Continuous (Note 1) VEBO 5.0 Vdc IC 1.0 Adc (Note 2) 3.0 Base Current IB Total Power Dissipation @ TA = 25°C PD Derate above 25°C 1.0 Adc 30 W 0.24 W/°C Operating and Storage Junction Temperature Range TJ, Tstg − 65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The 3.0 A max value is based upon actual current−handling capability of the device (See Figure 5). 2. Indicates JEDEC Registered Data for 2N4918 Series. THERMAL CHARACTERISTICS (Note 3) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC...