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TC58NVG2D4BFT00

4 GBIT (512M X 8 BIT) CMOS NAND E2PROM

Description

TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG2D4BFT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M × 8 BIT) CMOS NAND E PROM (Multi Level Cell) DESCRIPTION The TC58NVG2D4B is a single 3.3 V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 128 pages ×...

Toshiba

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TC58NVG2D4BFT00 4 GBIT (512M X 8 BIT) CMOS NAND E2PROM - Toshiba

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