8 GBIT (1G X 8 BIT) CMOS NAND E2PROM
Description
TOSHIBA CONFIDENTIAL
TENTATIVE
TC58NVG3D2ETA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2
8 GBIT (1G × 8 BIT) CMOS NAND E PROM (Multi-Level-Cell) DESCRIPTION
The TC58NVG3D2 is a single 3.3 V 8 Gbit (8,984,199,168 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192 + 376) bytes × 128 pages × 1...
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