TC58NVG5T2HTA00

TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG5T2HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 32 GBIT (4G  8 BIT) CMOS NAND E PROM (Triple-Level-Cell) DESCRIPTION The TC58NVG5T2HTA00 is a single 3.3 V 32 Gbit (40,478,441,472 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192  1024) bytes  516 pages  1064 blocks. The device has one 9216-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 9216-byte increments. The Erase operation is implemented in a single block unit (4128 Kbytes  516 Kbytes:9216 bytes  516 pages). The TC58NVG5T2HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. FEATURES  Organization Device capacity Register Page size Block size  TC58NVG5T2HTA00 9216  516  1064  8 bits 9216  8 9216 bytes (4128K  516K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Page Program, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 1028 blocks Max 1064 blocks Power supply VCC  2.7 V to 3.6 V Access time Ce...