TC58NVG1S3ETA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M × 8 BIT) CMOS NAND E PROM DESCRIPTION
The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The device has two 2112-byte static registe...