SMMBT2907AL

MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Collector Current − Peak (Note 3) Symbol VCEO VCBO VEBO IC ICM Value −60 −60 −5.0 −600 −1200 Unit Vdc Vdc Vdc mAdc mAdc 1 2 3 SOT−23 (TO−236AB) CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation − FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation − Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation − Heat Spreader or equivalent, (Note 4) @TA = 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 350 357 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W mW °C/W °C 1 2F = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. MARKING DIAGRAM 2F M G G RqJA PD RqJA PD RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only...