SQ9945BEY

www.vishay.com SQ9945BEY Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Configuration Package 60 0.064 0.082 6 Dual SO-8 FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SO-8 Dual D2 D2 5 D1 6 D1 7 8 D1 D2 G1 G2 4 3 G2 2 S2 1 G1 S1 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 60 ± 20 5.4 3.1 3.6 21.5 8.5 3.6 4 1.3 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount c Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). SYMBOL RthJA RthJF LIMIT 112 38 UNIT °C/W S15-1873-Rev. D, 10-Aug-15 1 Document Number: 71504 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO...