BD159G

BD159G Plastic Medium-Power Silicon NPN Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. Features http://onsemi.com Suitable for Transformerless, Line−Operated Equipment Thermopadt Construction Provides High Power Dissipation Rating for High Reliability These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC ICM IB PD 20 0.16 TJ, Tstg –65 to +150 W mW/_C _C Value 350 375 5.0 0.5 1.0 0.25 Unit Vdc Vdc Vdc Adc Adc Adc 0.5 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS, 20 WATTS COLLECTOR 2 3 BASE 1 EMITTER Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−225 CASE 77 STYLE 1 1 2 3 ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Characteristic Symbol RqJC Max Unit Thermal Resistance, Junction−to−Case 6.25 _C/W THERMAL CHARACTERISTICS MARKING DIAGRAM YWW BD159G Y WW BD159 G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device *For additional...