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SSG4801

SeCoS

Dual-P Enhancement Mode Power MOSFET

SSG4801 Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET RoHS Compliant Produc...


SeCoS

SSG4801

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Description
SSG4801 Elektronische Bauelemente -5 A, -30 V, RDS(ON) 50 m Dual-P Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch. SOP-8 B L D M FEATURES    A C N J K Simple Drive Requirement Lower On-resistance Low Gate Charge H G F E MARKING REF. 4801SS    = Date Code A B C D E F G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package SOP-8 MPQ 2.5K LeaderSize 13’ inch S1 D1 G1 D1 D2 D2 S2 G2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Total Power Dissipation 1 Linear Derating Factor Operating Junction & Storage Temperature Range Thermal Resistance Junction-ambient (Max.) Notes: 1. Surface Mounted on FR4 Board, t ≦ 10sec. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2% 1 Symbol VDS VGS TA = 25°C TA = 70°C TA = 25°C ID IDM PD TJ, TSTG RθJA Ratings -30 ±12 -5 -4.2 -30 2 0.016 -55 ~ 150 62.5 Unit V V A A W W / °C °C °C / W Thermal Resist...




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