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TPN4R203NC
Field Effect Transistor
Description
TPN4R203NC MOSFETs Silicon N-channel MOS (U-MOS) TPN4R203NC 1. Applications Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 3.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V,...
Toshiba
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TPN4R203NC
Field Effect Transistor
- Toshiba
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