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JDV2S19S

Part Number	JDV2S19S
Manufacturer	Toshiba
Description	VCO
Published	Nov 11, 2013
Detailed Description	JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band • • • High capacitance ratio: C1V/C4...
Datasheet	JDV2S19S PDF File

Overview

JDV2S19S TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S19S VCO for the UHF band • • • High capacitance ratio: C1V/C4V = 1.
8 (typ.
) Low series resistance: rs = 0.
35 Ω (typ.
) This device is suitable for use in a small-size tuner.
Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/vo...

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