STB18N55M5

STB18N55M5, STF18N55M5 Datasheet N-channel 550 V, 0.150 Ω typ., 16 A MDmesh™ M5 Power MOSFETs in a D2PAK and TO-220FP packages Features TAB ) 3 t(s 1 c D2PAK 3 2 1 TO-220FP Produ D(2, TAB) Order code VDS @ Tjmax. RDS(on)max. STB18N55M5 STF18N55M5 600 V 0.192 Ω Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Package D2PAK TO-220FP lete Applications so G(1) Switching applications ) - Ob S(3) AM01475v1_noZen roduct(s Product status link te P STB18N55M5 Obsole STF18N55M5 Description These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. DS12715 - Rev 1 - August 2018 For further information contact your local STMicroelectronics sales office. www.st.com STB18N55M5, STF18N55M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit D2PAK TO-220FP VGS Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C ) ID Drain current (continuous) at TC = 100 °C t(s IDM (1) Drain current (pulsed) uc PTOT Total dissipation at TC = 25 °C d dv/dt (2) Peak diode recovery voltage slope te Pro VISO Insulation withstand voltage (RMS) from all three leads to exter...