RD2006RH-SB

Ordering number : EN9054 RD2006RH-SB SANYO Semiconductors DATA SHEET RD2006RH-SB Features Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode VRRM=600V VF=1.75V max. (IF=20A) trr=21ns (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current R.M.S Forward Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM DC bias 50Hz resistive load, Sine wave Tc=63°C Tc=25°C (SANYO’s ideal heat dissipation condition) *, Package limited, DC 50Hz Sine wave, 1 pulse Conditions Ratings 600 20 30 220 150 --55 to +150 Unit V A A A °C °C IO IF(RMS) IFSM Tj Tstg *. SANYO’s condition is radiation from backside The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium Package Dimensions unit : mm (typ) 7534-001 16.0 3.4 5.6 3.1 8.0 Product & Package Information Package : TO-3PMLH JEITA, JEDEC : SC-93, TO-247, SOT-199 Minimum Packing Quantity : 100 pcs./tray 5.0 Marking Electrical Connection 2 21.0 4.0 1.0 22.0 0.8 2.8 2.0 20.4 0.7 0.9 RD2006 LOT No. 2.1 1 5.45 1 2 3 5.45 3.5 1 : Cathode 3 : Anode SANYO : TO-3PMLH-SB 5.45 5.45 http://semicon.sanyo.com/en/network 60811SA TKIM TC-00002614 No.9054-1/3 Free Datasheet http://www.datasheet4u.com/ RD2006RH-SB Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Res...