RD2004JN

Ordering number : ENA1486 RD2004JN SANYO Semiconductors DATA SHEET RD2004JN Features Diffused Junction Silicon Diode Low VF High-Speed Switching Diode High breakdown voltage (VRRM=400V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM Conditions Ratings 400 20 Sine wave, 10ms 1pulse 180 150 --55 to +150 Unit V A A °C °C IO IFSM Tj Tstg Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Reverse Recovery Time Thermal Resistance Symbol VR VF IR trr1 trr2 Rth(j-c) IR=1mA IF=20A VR=400V IF=10A, di / dt=100A/μs IF=0.5A, IR=1A Junction-Case : Smoothed DC 44 20 4.0 Conditions Ratings min 400 1.3 1.5 100 50 typ max Unit V V μA ns ns °C / W Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati...