Ordering number : ENA1593
RD2003JN
SANYO Semiconductors
DATA SHEET
RD2003JN
Features
Diffused Junction Silicon Diode
Low VF High-Speed Switching Diode
High breakdown voltage (VRRM=300V). High reliability. Fast forward / reverse recovery time. Low noise at the time of reverse recovery. Attachment workability is good by Mica-less package.
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