NE3521M04

Data Sheet NE3521M04 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 Low noise figure and high associated gain: NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value) Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS DBS LNB gain-stage, Mix-stage Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3521M04-T2 Order Number NE3521M04-T2-A Package Quantity Flat-lead 4-pin 3 kpcs/reel thin-type super minimold (M04) 15 kpcs/reel (Pb-Free) Marking V86 Supplying Form Embossed tape 8 mm wide Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape NE3521M04-T2B NE3521M04-T2B-A Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3521M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Note Symbol VDS VGS ID IG Ptot Tch Ratings 4.0 –3.0 IDSS 80 125 +125 Unit V V mA μA mW °C °C Storage Temperature Tstg –65 to +125 2 Note: Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PWB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 Page 1 of 8 Free Datasheet http://www....