SMMBTA06L

MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector − Emitter Voltage MMBTA05LT1 MMBTA06LT1, SMMBTA06LT1 Collector − Base Voltage MMBTA05LT1 MMBTA06LT1, SMMBTA06LT1 Emitter − Base Voltage Collector Current − Continuous Electrostatic Discharge Symbol VCEO Value 60 80 Vdc 60 80 4.0 500 HBM Class 3B MM Class C CDM Class IV Vdc mAdc Unit Vdc 1 3 VCBO 2 SOT−23 CASE 318 STYLE 6 VEBO IC ESD MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W 1H M G G 1GM M G G MMBTA05LT1 MMBTA06LT1, SMMBTA06L 1H, 1GM = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION °C See detailed ordering and shipping information in the package dimensions section on ...