SMMBT3904L

General Purpose Transistor NPN Silicon MMBT3904L, SMMBT3904L Features These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Collector Current − Peak (Note 3) THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC ICM Value 40 60 6.0 200 900 Unit Vdc Vdc Vdc mAdc mAdc Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 3. Reference SOA curve. DATA SHEET www.onsemi.com COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM 1AM M G G 1 1AM = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may b...