SMMBT2222AL

General Purpose Transistors NPN Silicon MMBT2222L, MMBT2222AL, SMMBT2222AL Features These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO Vdc MMBT2222L 30 MMBT2222AL, SMMBT2222AL 40 Collector −Base Voltage VCBO Vdc MMBT2222L 60 MMBT2222AL, SMMBT2222AL 75 Emitter −Base Voltage VEBO Vdc MMBT2222L 5.0 MMBT2222AL, SMMBT2222AL 6.0 Collector Current − Continuous Collector Current − Peak (Note 3) THERMAL CHARACTERISTICS IC 600 mAdc ICM 1100 mAdc Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 3. Reference SOA curve. DATA SHEET www.onsemi.com COLLECTOR 3 1 BASE 2 EMITTER...