2N4123

2N4123, 2N4124 General Purpose Transistors NPN Silicon Features Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO Vdc 2N4123 30 2N4124 25 Collector−Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter−Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.0 Vdc 200 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 123 STRAIGHT LEAD BULK PACK 1 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM 2N 412x AYWW G G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 1 November, 2008 − Rev. 4 x = 3 or 4 A = Assembly Location...