2N4036 2N4037
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4036...
2N4036 2N4037
PNP SILICON
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4036, 2N4037 are epitaxial planar
PNP Silicon
Transistors designed for small signal, medium power, general purpose industrial applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC IB PD PD TJ, Tstg ΘJC
2N4036 90
2N4037 60
65 40
7.0 7.0
1.0
0.5
5.0
1.0
-65 to +200
35
UNITS V V V A A W W °C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N4036
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
VCB=90V
- 1.0
ICBO
VCB=60V
--
ICEX
VCE=85V, VEB=1.5V
- 100
ICEX
VCE=30V, VEB=1.5V, TC=150°C
--
IEBO
VEB=7.0V
- 10
IEBO
VEB=5.0V
--
BVCEO
IC=100mA
65 -
VCE(SAT)
IC=150mA, IB=15mA
- 0.65
VBE(SAT)
IC=150mA, IB=15mA
- 1.4
VBE(ON)
VCE=10V, IC=150mA
--
hFE VCE=10V, IC=0.1mA
20 -
hFE VCE=10V, IC=1.0mA
--
hFE VCE=10V, IC=150mA
40 140
hFE VCE=2.0V, IC=150mA
20 200
hFE VCE=10V, IC=500mA
20 -
fT
VCE=10V, IC=50mA, f=20MHz
60 -
Cob VCB=10V, IE=0, f=1.0MHz
- 30
ton
VCE=30V, IC=150mA, IB1=IB2=15mA
-
110
toff
VCE=30V, IC=150mA, IB1=IB2=15mA
-
700
2N4037 MIN MAX
-- 0.25 -- 100 -- 1.0 40 - 1.4 -- 1.5 -15 50 250 --60 - 30 ---
UNITS µA µA µA mA...