2N4037

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N4036/D General Purpose Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N4036 2N4037 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Base Current Collector Current — Continuous Continuous Power Dissipation at or Below TC = 25°C Linear Derating Factor Continuous Power Dissipation at or Below TA = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature 1/16″ from Case for 10 Seconds Symbol VCEO VCBO VEBO IB IC PD 5.0 28.6 PD 1.0 5.72 TJ, Tstg TL 1.0 5.72 Watts mW/°C °C °C 5.0 28.6 Watts mW/°C 2N4036 – 65 – 90 – 7.0 – 0.5 – 1.0 2N4037 – 40 – 60 – 7.0 Unit Vdc Vdc Vdc Adc Adc 3 2 1 CASE 79–04, STYLE 1 TO–39 (TO–205AD) – 65 to +200 230 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RqJC 2N4036 35 2N4037 35 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Sustaining Voltage(1) (IC = – 100 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = – 0.1 mAdc) Collector Cutoff Current (VCE = – 85 Vdc, VEB = – 1.5 Vdc) (VCE = – 30 Vdc, VEB = – 1.5 Vdc, TC = 150°C) Collector Cutoff Current (VCB = – 90 Vdc, IE = 0) (VCB = – 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = – 7.0 Vdc, IC = 0) (VEB = – 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width VCEO(sus) 2N4036 2N4037 V(BR)CBO 2N4037 ICEX 2N4036 2N40...