2N4036

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N4036 PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification PNP switching transistor FEATURES High current (max. 1 A) Low voltage (max. 65 V). APPLICATIONS Amplifier and switching applications. DESCRIPTION PNP switching transistor in a TO-39 metal package. PINNING PIN 1 2 3 emitter base 2N4036 DESCRIPTION collector, connected to case 1 handbook, halfpage 2 2 3 3 MAM318 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tmb ≤ 25 °C IC = −150 mA; VCE = −2 V IC = −50 mA; VCE = −10 V; f = 100 MHz ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA open emitter open base CONDITIONS − − − − 20 60 − MIN. MAX. −90 −65 −1 7 200 − 700 MHz ns V V A W UNIT 1997 Jun 19 2 Philips Semiconductors Product specification PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating am...