STD75N3LLH6

STD75N3LLH6, STP75N3LLH6 STU75N3LLH6, STU75N3LLH6-S N-channel 30 V, 0.0042 Ω, 75 A, DPAK, TO-220, IPAK, Short IPAK STripFET™ VI DeepGATE™ Power MOSFET Features TAB TAB Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S VDSS RDS(on) max < 0.0055 Ω ID 3 2 1 1 3 DPAK TAB 30 V < 0.0059 Ω 75 A IPAK TAB ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 2 1 3 3 1 2 Short IPAK TO-220 Application Switching applications Figure 1. Internal schematic diagram D (TAB or 2) Description This N-Channel Power MOSFET product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. G(1) S(3) AM01474v1 Table 1. Device summary Marking Package DPAK TO-220 75N3LLH6 IPAK Short IPAK Tube Packaging Tape and reel Order codes STD75N3LLH6 STP75N3LLH6 STU75N3LLH6 STU75N3LLH6-S July 2011 Doc ID 15978 Rev 4 1/21 www.st.com 21 Free Datasheet http://www.datasheet4u.com/ Contents STD/P/U75N3LLH6, STU75N3LLH6-S Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuits ..............................................