2N3960

Data Sheet No. 2N3960 Type 2N3960 Geometry 0003 Polarity NPN Qual Level: JAN - JANTXV Features: General-purpose low-power NPN silicon transistor. Housed in TO-18 case. Also available in chip form using the 0003 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases. Generic Part Number: 2N3960 REF: MIL-PRF-19500/399 TO-18 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation, TA = 25 C Derate above 25oC Operating Junction Temperature Storage Temperature o Symbol VCEO VCBO VEBO PT Rating 12 20 4.5 400 2.3 Unit V V V mW mW/oC o TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N3960 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IC = 10 µA Collector-Emitter Cutoff Current VCE = 10 V, VBE = 0.4 V VCE = 10 V, VEB = 2.0 V VCE = 10 V, VEB = 2.0 V, TA = 150 C o Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX1 ICEX2 ICEX3 Min 20 12 4.5 ------- Max ------1.0 5.0 5.0 Unit V V V µA nA µA ON Characteristics Forward Current Transfer Ratio IC = 1.0 mA, VCE = 1 V IC = 10 mA, VCE = 1 V, pulsed IC = 30 mA, VCE = 1 V, pulsed IC = 10 mA, VCE = 1.0 V, TC = -55oC Base-Emitter Saturation Voltage VCE 1.0 V, IC = 1.0 mA VCE 1.0 V, IC = 30 mA Collector-Emitter Saturation Voltage IC...