2N3957

B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Gate Current Total Device Power Dissipation (each side) @ 85°C Case Temperature (both sides) Power Derating (both sides) – 50 V 50 mA 250 mW 500 mW 4.3 mW/°C At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Operating Current Gate Source Voltage Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Output Conductance Common Source Input Capacitance Drain Gate Capacitance Common Source Reverse Transfer Capacitance Noise Figure Differential Gate Current Saturation Drain Current Ratio Differential Gate Source Voltage Differential Gate Source Voltage with Temperature Transconductance Ratio gfs gos Ciss Cdgo Crss NF | IG1 – IG2 | IDSS1 / IDSS2 | VGS1 – VGS2 | ∆VGS1– VGS2 ∆T 2N3957 Min V(BR)GSS IGSS IG VGS VGS(OFF) VGS(F) IDSS 0.5 – 50 – 100 – 500 – 50 – 250 – 4.2 – 0.5 –1 –4 – 4.5 2 5 Max 2N3958 Min – 50 – 100 – 500 – 50 – 250 – 4.2 – 0.5 –1 0.5 –4 – 4.5 2 5 Max Unit V pA nA pA nA V V V V mA Process NJ16 Test Conditions IG = – 1 µA, VDS = ØV VGS = – 30V, VDS = ØV VGS = – 30V, VDS = ØV VDS = 20V, ID = 200 µA VDS = 20V, ID = 200 µA VDS =...