2N3906

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3906 PNP switching transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 23 Philips Semiconductors Product specification PNP switching transistor FEATURES Low current (max. 200 mA) Low voltage (max. 40 V). APPLICATIONS High-speed switching in industrial applications. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904. PINNING PIN 1 2 3 collector base emitter 2N3906 DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open emitter open base open collector CONDITIONS − − − − − − − −65 − −65 MIN. MAX. −40 −40 −6 −200 −300 −100 500 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 1999 Apr 23 2 Philips Semiconductors Product specification PNP switching transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDIT...