2N3866A

Data Sheet No. 2N3866A Type 2N3866A Geometry 1007 Polarity NPN Qual Level: JAN - JANS Features: General-purpose silicon transistor for switching and amplifier applications. Housed in TO-39 case. Also available in chip form using the 1007 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/398 which Semicoa meets in all cases. Generic Part Number: 2N3866A REF: MIL-PRF-19500/398 TO-39 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 30 60 3.5 0.4 -55 to +175 -55 to +175 Unit V V V A o C C o Data Sheet No. 2N3866A Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 µA, pulsed Collector-Emitter Breakdown Voltage IC = 5 mA, pulsed Collector-Emitter Breakdown Voltage IC = 40 mA, VBE = -5V, clamped Emitter-Base Breakdown Voltage IE = 100 µA, pulsed Collector-Emitter Cutoff Current VCE = 55 V Collector-Emitter Cutoff Current o VCE = 55 V, TA = +150 C Collector-Emitter Cutoff Current VCE = 28 V Symbol V(BR)CBO V(BR)CEO V(BR)CEC V(BR)EBO ICES ICES2 ICEO Min 60 30 55 3.5 ------- Max --------100 2.0 20 Unit V V --V µA mA µA ON Characteristics Forward Current Transfer Ratio IC = 50 mA, VCE = 5.0 V (pulsed) IC = 360 mA, VCE = 5.0 V (pulsed) IC = 50 mA, VCE = 5.0 V (pulsed), T...