AON6752
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Sch...
AON6752
30V N-Channel AlphaMOS
General Description
Latest Trench Power AlphaMOS (αMOS LV) technology Integrated
Schottky Diode (SRFET) Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 1.7mΩ < 2.5mΩ
Application
DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested 100% Rg Tested
DFN5X6 Top View Bottom View
1 2 3 4
Top View
D SRFETTM Soft Recovery MOSFET: Integrated
Schottky Diode G
8 7 6 5
PIN1
S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.05mH C VDS Spike Power Dissipation B Power Dissipation A 100ns TC=25° C TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
C
Maximum 30 ±20 85 66 340 54 43 55 76 36 83 33 7.4 4.7 -55 to 150
Units V V A
VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG
A A mJ V W W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 14 40 1.1
Max 17 55 1.5
Units ° C/W ° C/W ° C/W
Rev0: Mar 2012
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