AON6718L

AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. Features VDS (V) = 30V ID = 80A RDS(ON) < 3.7mΩ RDS(ON) < 5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! Fits SOIC8 footprint ! S S S G D Top View D D D D G S SRFET TM Soft Recovery MOSFET : Integrated Schottky Diode DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25°C TA=70°C TC=25°C TC=100°C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG Maximum 30 ±20 80 63 210 19 15 40 80 83 33 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14.2 42 1.2 Max 17 60 1.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com Free Datasheet http://www.datasheet4u.com/ AON6718L Electrical Characteri...