N-Channel MOSFET
AON6536
30V N-Channel MOSFET
General Description
Product Summary
The AON6536 combines advanced trench MOSFET technolo...
Description
AON6536
30V N-Channel MOSFET
General Description
Product Summary
The AON6536 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100% UIS Tested 100% Rg Tested
30V 55A < 7mΩ < 10mΩ
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche Energy L=0.05mH C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 30 ±20 55 35 135 22 17.5 35 31 35.5 14 5.5 3.6
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 18 40 2.8
Max 22 55 3.5
D
S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
Rev.1.0: February 2014
www.aosmd.com
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AON6536
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS...
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