2N3799X

LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME 2N3799X PNP, LOW NOISE AMPLIFIER TRANSISTOR 5.33 (0.210) 4.32 (0.170) FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR CECC SCREENING OPTIONS LOW NOISE AMPLIFIER 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 12.7 (0.500) min. APPLICATIONS: 3 2 1 Low Level Amplifier Instrumentation Amplifiers General Purpose TO–18 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG RqJA RqJC Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk –60V –50V –5V –50mA 360mW 2.06mW / °C 1.2W 6.86mW / °C –65 to +200°C 0.49°C/mW 0.15°C/mW Prelim. 7/96 LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) Collector – Emitter Breakdown Voltage IC = –10mA Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Curr...