AON6411

AON6411 20V P-Channel MOSFET General Description The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) -20 -85A < 2.1mΩ < 2.5mΩ < 3.6mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C C Maximum -20 ±12 -85 -67 -340 -47 -38 70 245 156 62.5 7.3 4.7 -55 to 150 Units V V A VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG A A mJ W W ° C Avalanche energy L=0.1mH TC=25° C Power Dissipation B TC=100° C Power Dissipation A C TA=25° TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 0.6 Max 17 55 0.8 Units ° C/W ° C/W ° C/W Rev 0: Jan. 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6411 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, V...