N-Channel MOSFET
AON6292
100V N-Channel MOSFET
General Description
Product Summary
• The AON6292 uses trench MOSFET technology that is...
Description
AON6292
100V N-Channel MOSFET
General Description
Product Summary
The AON6292 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
RoHS and Halogen-Free Compliant
100% UIS Tested 100% Rg Tested
100V 85A < 6mΩ < 8.5mΩ
Top View
DFN5X6 Bottom View
PIN1
Top View
18 27 36 45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum 100 ±20 85 67 220 24 20 50 125 156 62.5 7.3 4.7
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJC
Typ 14 40 0.55
Max 17 55 0.8
D
S
Units V V A
A A mJ W W °C
Units °C/W °C/W °C/W
Rev 1.0: February 2016
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