2N3792

2N3792 MECHANICAL DATA Dimensions in mm(inches) 40.01 (1.575) Max. PNP SILICON EPITAXIAL BASE POWER TANSISTORS 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) APPLICATIONS Linear Power and Switching Applications 1.63 (0.064) 1.52 (0.060) 2 11.18 (0.440) 10.67 (0.420) 4.09 (0.161) 3.84 (0.151) 2 Pls 1 16.97 (0.668) 16.87 (0.664) TO3 PIN 1 — Base PIN 2 — Emitter Case is Collector. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO(sus) VEBO IC IB PTOT Tstg, Tj, Collector – Base Voltage(IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage(IC = 0) Collector Current Base Current Total Power Dissipation at Tcase = 25°C Storage Temperature Junction Temperature 80V 80V 7V 10A 4A 150W 65 to 200°C 200°C THERMAL CHARACTERISTICS RqJC Thermal Resistance, Junction to Case 1.17 °C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 06/00 2N3792 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus)* VCE(sat)* VBE(on)* IEBO ICEX Collector - Emitter Sustaining Voltage Collector - Emitter Saturation Voltage Base Emitter Voltage Emmiter Cut-off Current Collector Cut-off Current Test Conditions IC = 200mA IC = 5A IC = 5A IC = 10A IC = 0 VBE = 1.5V IC = 1A IB = 0 IB = 0.5V VCC = 2V VCC = 4V VEB =7V VCE = 80 Tc ...