2N3772

2N3771, 2N3772 High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771 = 2.5 Adc @ VCE = 60 Vdc − 2N3772 These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak Symbol 2N3771 VCEO 40 VCEX 50 VCB 50 VEB 5.0 IC 30 30 2N3772 60 80 100 7.0 20 30 Unit Vdc Vdc Vdc Vdc Adc Base Current − Continuous Peak IB 7.5 5.0 Adc 15 15 Total Device Dissipation @ TC = 25°C PD Derate above 25°C 150 0.855 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 1.17 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC registered data. www.onsemi.com 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS MARKING DIAGRAM TO−204AA (TO−3) CASE 1−07 STYLE 1 2N377xG AYYWW MEX 2N377x G A YY WW MEX = Device Code x = 1 or 2 = Pb−Free Package = Assembly Location = Year = Work Week = Country ...