DatasheetsPDF.com

HBTGFR421-S

SEOUL SEMICONDUCTOR

CHIP LED DEVICE

*Customer: Pb Free SPECIFICATION ITEM MODEL Revision No. CHIP LED DEVICE HBTGFR421-S [Contents] 1. Features 2. Absolu...


SEOUL SEMICONDUCTOR

HBTGFR421-S

File Download Download HBTGFR421-S Datasheet


Description
*Customer: Pb Free SPECIFICATION ITEM MODEL Revision No. CHIP LED DEVICE HBTGFR421-S [Contents] 1. Features 2. Absolute maximum ratings 3. Electro-optical characteristics 4. Characteristic Diagrams 5. Soldering profile 6. Outline dimension 7. Packing 8. Reel packing structure 9. Precaution for use Customer Approved by Approved by Approved by Supplier Drawn by Checked by Approved by SSC-QP-0401-06(REV.0) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 Seoul HSemiconductor BTGFR421-S - 1/7- Free Datasheet http://www.datasheet4u.com/ 1. Features Full-color lighting Package : 1.6×1.5×0.5mm, Flat molding 2. Absolute Maximum Ratings Parameter Power Dissipation Symbol Pd Color Red Green Blue Red Green Blue Red Green Blue 5 -30 ~ +85 -40 ~ +100 Value 72 68 30 20 50 35 (Ta=25℃) Unit ㎽ Forward Current IF IFM*1 VR Topr Tstg ㎃ Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature ㎃ V ℃ ℃ *1 IFM conditions: Pulse width Tw≤ 0.1ms, Duty ratio≤ 1/10 3. Electro-optical Characteristics Parameter Forward Voltage Symbol VF IR IV λ Condition IF=10㎃ VR=5V IF=10㎃ IF=20㎃ IF=20㎃ IF=20㎃ Color Red Green Blue Red Green Blue Red Green Blue Red Green Blue Red Green Blue Red Green Blue Min 1.7 2.7 2.7 45 80 25 615 510 465 Typ 2.2 3.1 3.1 0.1 0.1 0.1 70 140 50 625 525 470 20 35 25 150 150 150 Max 2.4 3.4 3.4 10 10 10 635 530 475 - (Ta=25℃) Unit V Reverse Current Luminous Intensity*2 Dominant Wave...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)