Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
VB40170C
www.vishay.com
Vishay General Semiconductor
Ultra Low VF = 0.52 V at IF = 5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
TO-263AB
FEATURES
Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
1 VB40170C
PIN ...
