29F512

EN29F512 EN29F512 512 Kbit (64K x 8-bit) 5V Flash Memory FEATURES 5.0V operation for read/write/erase operations Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns Sector Architecture: 4 uniform sectors of 16Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed Byte program time: 7µs typical Sector erase time: 300ms typical Chip erase time: 1.5s typical JEDEC Standard program and erase commands JEDEC standard DATA polling and toggle bits feature Single Sector and Chip Erase Sector Unprotect Mode Embedded Erase and Program Algorithms Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode 0.23 µm triple-metal double-poly triple-well CMOS Flash Technology Low Vcc write inhibit < 3.2V 100K endurance cycle Package Options - 32-pin PDIP - 32-pin PLCC - 32-pin 8mm x 20mm TSOP (Type 1) - 32-pin 8mm x 14mm TSOP (Type 1) Commercial and Industrial Temperature Ranges - Low Standby Current - 1µA CMOS standby current-typical - 1mA TTL standby current Low Power Active Current - 12mA typical active read current - 30mA program/erase current GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes ...